Datasheet > 2SK4107(F)

2SK4107(F)

更新时间： 2024-09-28 21:09:43

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	239K
描述
2SK4107(F)

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2SK4107(F) 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.81
Base Number Matches：	1

2SK4107(F) 数据手册

2SK4107

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)

2SK4107

○Switching Regulator Applications

Unit: mm

•

Low drain−source ON resistance

: R

= 0. 33 Ω (typ.)

DS (ON)

High forward transfer admittance

: |Y | = 8.5 S (typ.)

Low leakage current

Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

150

765

(Note 2)

JEDEC

JEITA

―

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-16C1B

150

Weight: 4.6 g (typ.)

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C/W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 5.78 mH, R = 25 Ω, I

= 15 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

中文翻译

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与2SK4107(F)相关器件

型号	品牌	获取价格	描述	数据表
2SK4107_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK4108	TOSHIBA	获取价格	Silicon N-Channel MOS Type Switching Regulator Applications
2SK4108(F,T)	TOSHIBA	获取价格	MOSFET N-CH 500V 20A SC-67
2SK4110	TOSHIBA	获取价格	TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET Gener
2SK4111	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67,
2SK4112	TOSHIBA	获取价格	TRANSISTOR 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET General
2SK4113	TOSHIBA	获取价格	TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Pu
2SK4114	TOSHIBA	获取价格	TRANSISTOR 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-67, 3 PIN, FET General Pu
2SK4115	TOSHIBA	获取价格	Switching Regulator Applications
2SK4116LS	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device

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