Datasheet > 2SK3993-ZK-E1

2SK3993-ZK-E1

更新时间： 2024-09-11 07:59:31

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	104K
描述
2SK3993-ZK-E1

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2SK3993-ZK-E1 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SK3993-ZK-E1 数据手册

PRELIMINARY PRODUCT INFORMATION

MOS FIELD EFFECT TRANSISTOR

2SK3993

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

ORDERING INFORMATION

The 2SK3993 is N-channel MOS FET device that

features a low on-state resistance and excellent switching

characteristics, and designed for low voltage high current

applications such as DC/DC converter with synchronous

rectifier.

PART NUMBER

2SK3993

PACKAGE

TO-251 (MP-3)

TO-252 (MP-3ZK)

2SK3993-ZK

(TO-251)

FEATURES

• Low on-state resistance

R^DS(on)1= 3.8 mΩ MAX. (VGS = 10 V, ID = 32 A)

• Low C^iss: Ciss = 4520 pF TYP.

• 5 V drive available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

(TO-252)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

VDSS

VGSS

ID(DC)

ID(pulse)

PT1

±20

±64

±256

Total Power Dissipation (TC = 25°C)

Total Power Dissipation

°C

P^T2

1.0

Channel Temperature

Tch

150

−55 to +150

Storage Temperature

T^stg

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

I^AS

E^AS

490

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V

The information contained in this document is being issued in advance of the production cycle for the

product. The parameters for the product may change before final production or NEC Electronics

Corporation, at its own discretion, may withdraw the product prior to its production.

Not all products and/or types are availabe in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17322EJ2V0PM00 (2nd edition)

Date Published November 2004 NS CP(K)

Printed in Japan

The mark ★ shows major revised points.

2004

12 3 4

中文翻译

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