2SK3507-ZK

更新时间： 2024-11-11 22:23:39

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	143K
描述
SWITCHING N-CHANNEL POWER MOSFET

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中文翻译

获取价格

数据手册

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2SK3507-ZK 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3507

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

ORDERING INFORMATION

The 2SK3507 is N-channel MOS FET device that features

a low on-state resistance and excellent switching characteristics,

designed for low voltage high current applications such as DC/DC

converter with synchronous rectifier.

PART NUMBER

2SK3507-ZK

PACKAGE

TO-252 (MP-3ZK)

FEATURES

• 4.5 V drive available

• Low on-state resistance

RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A)

• Low gate charge

Q^G= 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)

• Built-in G-S protection diode

• Surface mount package available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation ^Note2

Channel Temperature

VDSS

VGSS

ID(DC)

I^D(pulse)

PT1

P^T2

T^ch

T^stg

I^AS

±16

±22

±45

°C

1.5

150

−55 to +150

Storage Temperature

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

E^AS

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm

3. Starting T^ch= 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D15387EJ1V0DS00 (1st edition)

Date Published December 2003 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7 8

中文翻译

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