Datasheet > 2SK3510

2SK3510

更新时间： 2024-11-12 06:23:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
1页	44K
描述
MOS Field Effect Transistor

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中文翻译

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数据手册

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2SK3510 数据手册

SMD Type

MOSFET

MOS Field Effect Transistor

2SK3510

TO-263

Unit: mm

+0.2

4.57

-0.2

Features

+0.1

1.27

-0.1

Super low on-state resistance:

R^DS(on)= 8.5 m MAX. (VGS = 10 V, ID = 42 A)

Low Ciss: Ciss = 8500 pF TYP.

+0.1

-0.1

0.1max

1.27

Built-in gate protection diode

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

332

125

1.5

Power dissipation

T^C=25

T^A=25

P^D

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate cutoff voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Symbol

I^DSS

I^GSS

V^GS(off)

Yfs

Testconditons

Min

Typ

Max

Unit

VDS=70V,VGS=0

VGS= 20V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=42A

VGS=10V,ID=42A

2.0

3.0

4.0

R^DS(on)

Ciss

C^oss

C^rss

t^on

6.5

8500

1300

650

8.5

V^DS=10V,VGS=0,f=1MHZ

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

t^r

I^D=42A,VGS(on)=10V,RL=10 ,VDD=38V

Turn-off delay time

Fall time

t^off

105

Total Gate Charge

Q^G

150

I^D=83A, VDD =60V, VGS = 10 V

Gate to Source Charge

Gate to Drain Charge

Q^GS

Q^GD

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与2SK3510相关器件

型号	品牌	获取价格	描述	数据表
2SK3510-S	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3510-S-AZ	NEC	获取价格	暂无描述
2SK3510-Z	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3510-Z-AZ	RENESAS	获取价格	83A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, MP-25Z, TO-220SMD, 3 PIN
2SK3510-Z-E2-AZ	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,83A I(D),TO-263ABVAR
2SK3510-ZJ	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3510-ZJ-AZ	RENESAS	获取价格	83A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN
2SK3510-ZJ-E2-AZ	RENESAS	获取价格	2SK3510-ZJ-E2-AZ
2SK3511	TYSEMI	获取价格	Super low on-state resistance: RDS(on) = 12.5 m MAX Built-in gate protection diode
2SK3511	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET