2SK3354-Z

更新时间： 2024-11-06 22:36:15

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
4页	45K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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中文翻译

获取价格

数据手册

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2SK3354-Z 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3354

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

PART NUMBER

2SK3354

The 2SK3354 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

PACKAGE

TO-220AB

TO-262

2SK3354-S

FEATURES

2SK3354-Z

TO-220SMD

• Super low on-state resistance:

DS(on)1

= 8.0 mΩ MAX. (V = 10 V, I = 42 A)

★

DS(on)2

= 12 mΩ MAX. (V = 4 V, I = 42 A)

iss

• Low C : C = 6300 pF TYP.

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage

V^DSS

V^GSS(AC)

I^D(DC)

I^D(pulse)

P^T

±20

Gate to Source Voltage

Drain Current (DC)

±83

Drain Current (pulse) ^Note1

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

±332

100

°C

P^T

1.5

T^ch

150

Storage Temperature

T^stg

–55 to +150

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

I^AS

★

E^AS

302

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

★

2. Starting T^ch= 25 °C, R^G= 25 Ω, V^GS= 20 V → 0 V

THERMAL RESISTANCE

Channel to Case

Rth(ch-C)

Rth(ch-A)

1.25

83.3

°C/W

Channel to Ambient

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published June 1999 NS CP(K)

Printed in Japan

D14131EJ1V0DS00 (1st edition)

The mark ★ shows major revised points.

1999

12 3 4

中文翻译

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