2SK2866(Q)

更新时间： 2024-11-18 12:58:19

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动 DC-DC转换器局域网
页数	文件大小	规格书
6页	707K
描述
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,10A I(D),TO-220AB

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中文翻译

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技术参数
数据手册

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2SK2866(Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	10 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	125 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

2SK2866(Q) 数据手册

2SK2866

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2866

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.54 Ω (typ.)

DS (ON)

: |Y | = 9.0 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 600 V)

DSS

: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

600

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

125

JEDEC

JEITA

TO-220AB

Single pulse avalanche energy

363

(Note 2)

SC-46

Avalanche current

12.5

TOSHIBA

2-10P1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.9 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.0

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

83.3

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 6.36 mH, R = 25 Ω, I = 10 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-08

12 3 4 5 6

中文翻译

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与2SK2866(Q)相关器件

型号	品牌	获取价格	描述	数据表
2SK2866_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2866_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2867	ETC	获取价格
2SK2869	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2869	TYSEMI	获取价格	Low on-resistance RDS = 0.033 typ. 4V gate drive device can be driven from 5V source
2SK2869	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2869	KEXIN	获取价格	N-Channel Silicon MOSFET
2SK2869(L)	RENESAS	获取价格	0.07ohm, POWER, FET, SC-63, 3 PIN
2SK2869(L)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2869(S)	HITACHI	获取价格	Power Field-Effect Transistor, 0.07ohm, SC-64, 3 PIN

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