生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 10 V |
最大漏极电流 (ID): | 0.17 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2795DXTR | RENESAS |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
2SK2795DXUL | HITACHI |
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
2SK2796 | RENESAS |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK2796 | HITACHI |
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Silicon N Channel MOS FET High Speed Power Switching | |
2SK2796(L) | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251 | |
2SK2796(L)-(1) | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-251VAR | |
2SK2796(L)|2SK2796(S) | ETC |
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2SK2796(S) | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252AA | |
2SK2796(S)-(1) | RENESAS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
2SK2796(S)-(2) | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-252VAR |