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2SK2249 PDF预览

2SK2249

更新时间: 2024-09-08 23:20:39
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2SK2249 数据手册

 浏览型号2SK2249的Datasheet PDF文件第2页 
N-channel MOS-FET  
2SK2249-01L,S  
F-III Series  
30V 0,06W 10A  
35W  
> Features  
> Outline Drawing  
- High Current  
- Low On-Resistance  
- No Secondary Breakdown  
- Low Driving Power  
- High Forward Transconductance  
> Applications  
- Motor Control  
- General Purpose Power Amplifier  
- DC-DC converters  
> Maximum Ratings and Characteristics  
> Equivalent Circuit  
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified  
Item  
Symbol  
Rating  
Unit  
V
Drain-Source-Voltage  
V
30  
30  
10  
40  
DS  
V
V
Drain-Gate Voltage (RGS=20KW)  
Continous Drain Current  
Pulsed Drain Current  
DGR  
I
A
D
I
A
D(puls)  
Gate-Source-Voltage  
V
±16  
35  
V
GS  
Max. Power Dissipation  
Operating and Storage Temperature Range  
P
W
°C  
°C  
D
T
150  
ch  
T
-55 ~ +150  
stg  
Electrical Characteristics (TC=25°C), unless otherwise specified  
-
Item  
Symbol  
Test conditions  
Min.  
30  
1,0  
Typ.  
1,5  
Max.  
Unit  
V
ID=1mA  
ID=1mA  
VDS=30V  
VGS=0V  
Drain-Source Breakdown-Voltage  
Gate Threshhold Voltage  
Zero Gate Voltage Drain Current  
V
(BR)DSS  
VDS=VGS  
Tch=25°C  
Tch=125°C  
VDS=0V  
V
2,0  
500  
1,0  
V
GS(th)  
I
10  
0,2  
10  
µA  
mA  
nA  
W
DSS  
V
GS=0V  
VGS=±16V  
ID=5A  
Gate Source Leakage Current  
I
100  
GSS  
VGS=4V  
Drain Source On-State Resistance  
R
0,045 0,080  
0,035 0,060  
10  
DS(on)  
ID=5A  
VGS=10V  
VDS=10V  
W
S
ID=5A  
Forward Transconductance  
Input Capacitance  
g
5
fs  
VDS=25V  
C
900  
600  
160  
10  
1350  
900  
240  
15  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
A
iss  
VGS=0V  
f=1MHz  
VCC=10V  
ID=10A  
Output Capacitance  
C
oss  
Reverse Transfer Capacitance  
Turn-On-Time ton (ton=td(on)+tr)  
C
rss  
t
d(on)  
t
15  
25  
r
Turn-Off-Time toff (ton=td(off)+tf)  
VGS=10V  
RGS=25 W  
t
110  
60  
170  
90  
d(off)  
t
f
Tch=25°C  
Avalanche Capability  
I
L=100µH  
10  
AV  
IF=2xIDR VGS=0V Tch=25°C  
IF=IDR VGS=0V  
Diode Forward On-Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
V
1,0  
35  
1,5  
V
SD  
t
ns  
µC  
rr  
-dIF/dt=100A/µs Tch=25°C  
Q
0,05  
rr  
-
Thermal Characteristics  
Item  
Symbol  
Test conditions  
channel to air  
Min.  
Typ.  
Max.  
125  
Unit  
Thermal Resistance  
R
°C/W  
th(ch-a)  
R
channel to case  
3,57 °C/W  
th(ch-c)  
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com  

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