生命周期: | Obsolete | 零件包装代码: | TO-3P |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 其他特性: | HIGH VOLTAGE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 1000 V |
最大漏极电流 (Abs) (ID): | 4 A | 最大漏极电流 (ID): | 4 A |
最大漏源导通电阻: | 3.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 100 W | 最大脉冲漏极电流 (IDM): | 16 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2259-01M | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-220AB | |
2SK2259-01MR | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK226 | HITACHI |
获取价格 |
SILICON N-CHANNEL ENHANCEMENT MOSFET | |
2SK2260 | SANYO |
获取价格 |
Very High-Speed Switching Applications | |
2SK2260(KO)TD | ONSEMI |
获取价格 |
Power Field-Effect Transistor, 1.2A I(D), 150V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
2SK2261 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SPAK | |
2SK2262 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SPAK | |
2SK2262T105 | ROHM |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 60V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK2263 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | TO-247AE | |
2SK2263F31 | ROHM |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide S |