2SK2252-01S

更新时间： 2024-01-03 12:11:10

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
2页	194K
描述
N-channel MOS-FET

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中文翻译

获取价格

数据手册

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2SK2252-01S 数据手册

N-channel MOS-FET

2SK2252-01L,S

FAP-IIA Series

250V 0,5W

50W

> Features

> Outline Drawing

- High Speed Switching

- Low On-Resistance

- No Secondary Breakdown

- Low Driving Power

- High Voltage

- VGS = ± 30V Guarantee

- Avalanche Proof

> Applications

- Switching Regulators

- UPS

- DC-DC converters

- General Purpose Power Amplifier

> Maximum Ratings and Characteristics

> Equivalent Circuit

- Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

Unit

Drain-Source-Voltage

250

Drain-Gate-Voltage (R_GS=20KW)

Continous Drain Current

Pulsed Drain Current

DGR

D(puls)

Gate-Source-Voltage

±30

Max. Power Dissipation

Operating and Storage Temperature Range

°C

150

-55 ~ +150

stg

Electrical Characteristics (T_C=25°C), unless otherwise specified

Item

Symbol

Test conditions

Min.

250

Typ.

3,0

Max.

Unit

I_D=1mA

V_GS=0V

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

(BR)DSS

I_D=1mA

V_DS=V_GS

T_ch=25°C

T_ch=125°C

V_DS=0V

2,5

3,5

500

1,0

GS(th)

V_DS=250V

0,2

µA

DSS

_GS=0V

V_GS=±30V

I_D=4A

Gate Source Leakage Current

Drain Source On-State Resistance

Forward Transconductance

Input Capacitance

100

0,5

GSS

V_GS=10V

V_DS=25V

0,35

DS(on)

I_D=4A

2,5

V_DS=25V

750

130

1130

200

iss

V_GS=0V

f=1MHz

V_CC=150V

I_D=8A

Output Capacitance

oss

Reverse Transfer Capacitance

Turn-On-Time t_on(t_on=t_d(on)+t_r)

rss

d(on)

Turn-Off-Time t_off(t_on=t_d(off)+t_f)

V_GS=10V

R_GS=10 W

d(off)

T_ch=25°C

Avalanche Capability

L = 100µH

T_C=25°C

Continous Reverse Drain Current

Pulsed Reverse Drain Current

Diode Forward On-Voltage

Reverse Recovery Time

DRM

I_F=2xI_DRV_GS=0V T_ch=25°C

I_F=I_DRV_GS=0V

1,0

120

0,6

1,5

µC

-dI_F/dt=100A/µs T_ch=25°C

Reverse Recovery Charge

Thermal Characteristics

Item

Symbol

Test conditions

channel to air

Min.

Typ.

Max.

125

Unit

Thermal Resistance

°C/W

th(ch-a)

channel to case

2,5 °C/W

th(ch-c)

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com

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