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2SK2266TE24L PDF预览

2SK2266TE24L

更新时间： 2024-02-08 13:07:00
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
6页 448K
描述
TRANSISTOR 45 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

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中文翻译

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2SK2266TE24L 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：End Of Life包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.72Is Samacsys：N
其他特性：LOGIC LEVEL COMPATIBLE外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (ID)：45 A最大漏源导通电阻：0.055 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：N-CHANNEL功耗环境最大值：65 W
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK2266TE24L 数据手册

 浏览型号2SK2266TE24L的Datasheet PDF文件第2页浏览型号2SK2266TE24L的Datasheet PDF文件第3页浏览型号2SK2266TE24L的Datasheet PDF文件第4页浏览型号2SK2266TE24L的Datasheet PDF文件第5页浏览型号2SK2266TE24L的Datasheet PDF文件第6页 
2SK2266  
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)  
2SK2266  
Chopper Regulator, DC–DC Converter and Motor Drive  
Applications  
Unit: mm  
z 4-V gate drive  
z Low drain−source ON resistance  
z High forward transfer admittance  
: R  
= 22 mΩ (typ.)  
DS (ON)  
: |Y | = 27 S (typ.)  
fs  
z Low leakage current : I  
= 100 μA (max) (V  
= 60 V)  
DSS  
DS  
z Enhancement mode : V = 0.8 to 2.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain−source voltage  
Symbol  
Rating  
Unit  
V
60  
60  
V
V
V
DSS  
Drain−gate voltage (R  
Gate−source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
45  
GSS  
DC (Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
180  
65  
DP  
JEDEC  
JEITA  
―
―
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
Single pulse avalanche energy  
E
246  
mJ  
(Note 2)  
TOSHIBA  
2-10S1B  
Avalanche current  
I
45  
6.5  
A
Weight: 1.5 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability  
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data  
(i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.92  
83.3  
°C / W  
°C / W  
th (ch−c)  
JEDEC  
JEITA  
―
―
R
th (ch−a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 165 μH, RG = 25 Ω, I = 45 A  
TOSHIBA  
2-10S2B  
V
DD  
ch  
AR  
Weight: 1.5 g (typ.)  
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2009-09-29  
123456

中文翻译

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