2SJ319(S)

更新时间： 2024-01-06 23:55:53

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
9页	48K
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数据手册

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2SJ319(S) 数据手册

2SJ319(L), 2SJ319(S)

Typical Capacitance vs.

Drain to Source Voltage

Body–Drain Diode Reverse

Recovery Time

1000

500

Ciss

200

100

200

100

Coss

= 0

f = 1 MHz

di/dt = 50 A/µs, V

duty < 1 %, Ta = 25 °C

= 0

Crss

–10

–20

–30

-40

–50

(V)

–0.05 –0.1 –0.2

–0.5 –1

–2

–5

Reverse Drain Current

(A)

Drain to Source Voltage V

Switching Characteristics

= –10 V, V = –30 V

Dynamic Input Characteristics

500

= –50 V

–100 V

–150 V

duty < 1 %, PW = 2 µs

200

100

–100

–200

–300

–4

VDD = –150 V

–8

d(off)

–100 V

–50 V

–12

d(on)

–400

–500

–16

–20

–0.05 –0.1 –0.2 –0.5 –1 –2

–5 –10

Drain Current

(A)

Gate Charge Qg (nc)

1 2 3 456 7 8 9

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