2SJ319(S)

更新时间： 2024-01-25 22:51:12

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
9页	48K
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数据手册

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2SJ319(S) 数据手册

2SJ319(L), 2SJ319(S)

Static Drain to Source on State Resistance

vs. Drain Current

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–20

–16

–12

–8

Pulse Test

= –10 V

Pulse Test

= –5 A

0.5

–2 A

–1 A

–4

0.2

0.1

–0.2

–0.5

–1

–2

–5

(A)

–10

–4

–8

–16

–20

(V)

Gate to Source Voltage

Drain Current

Forward Transfer Admittance vs.

Drain Current

Static Drain to Source on State Resistance

vs. Temperature

Tc = –25 °C

–2 A

= –5 A

25 °C

75 °C

0.5

–1 A

0.2

0.1

= –10 V

Pulse Test

= –10 V

Pulse Test

–40

–0.05 –0.1 –0.2 –0.5 –1 –2

–10

–5

120

160

Drain Current I

(A)

Case Temperature Tc (°C)

1 2 345 6 7...9

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2SJ319L	RENESAS	Silicon P Channel MOS FET	获取价格