Datasheet > 2SJ205-T2-AZ

2SJ205-T2-AZ

更新时间： 2024-09-17 14:39:27

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
5页	362K
描述
TRANSISTOR,MOSFET,P-CHANNEL,16V V(BR)DSS,500MA I(D),TO-243

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技术参数
数据手册

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2SJ205-T2-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	0.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SJ205-T2-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ205

P-CHANNEL MOS FET

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The 2SJ205, P-channel vertical type MOS FET, is a switching device

which can be driven by 3 V power supply.

As the MOS FET is driven by low voltage and does not require

consideration of driving current, it is suitable for appliances including

VCR cameras and headphone stereos which need power saving.

FEATURES

• Directly driven by ICs having a 3 V power supply.

• Not necessary to consider driving current because of its

high input impedance.

• Possible to reduce the number of parts by omitting the bias

resistor.

• Has low on-state resistance

DS(on) = 5.0 Ω MAX. VGS = －2.5 V, ID = －10 mA

DS(on) = 3.0 Ω MAX. VGS = －4 V, ID = －0.3 A

<R>

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

ID(pulse)

−16

m16

m500

Drain Current (pulse) ^{Note 1}

Total Power Dissipation ^{Note 2}

Channel Temperature

m1.0

2.0

°C

T^ch

150

Storage Temperature

T^stg

−55 to +150

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

2. When using ceramic board of 16 cm²× 0.7 mm

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18276EJ4V0DS00 (4th edition)

(Previous No. TC-2327A)

Date Published July 2006 NS CP(K)

Printed in Japan

1991, 2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5

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与2SJ205-T2-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SJ206	KEXIN	获取价格	MOS Fied Effect Transistor
2SJ206	NEC	获取价格	P-CHANNEL MOS FET FOR SWITCHING
2SJ206-AZ	RENESAS	获取价格	Power MOSFETs for Automotive, POMM, /
2SJ206-T1	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,500MA I(D),TO-243
2SJ206-T1	NEC	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
2SJ206-T1-AY	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,500MA I(D),TO-243
2SJ206-T2	NEC	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
2SJ206-T2-AY	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,500MA I(D),TO-243
2SJ207	NEC	获取价格	P-CHANNEL MOS FET FOR SWITCHING
2SJ207	KEXIN	获取价格	MOS Fied Effect Transistor