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2SJ209 PDF预览

2SJ209

更新时间: 2024-11-09 05:56:47
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 43K
描述
MOS Fied Effect Transistor

2SJ209 数据手册

  
SMD Type  
MOSFET  
MOS Fied Effect Transistor  
2SJ209  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
Features  
3
Directly driven by Ics having a 5V poer supply.  
Not necessary to consider driving current because of  
its high input impedance.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
Possible to reduce the number of parts by omitting the biasresistor.  
1 GATE  
2 SOURCE  
3 DRAIN  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage VGS=0  
Gate to source voltage VDS=0  
Drain current (DC)  
Symbol  
VDSS  
VGSS  
ID  
Rating  
-100  
Unit  
V
V
16  
m A  
m A  
m W  
100  
Drain current(pulse) *  
ID  
200  
Power dissipation  
PD  
200  
Channel temperature  
Tch  
150  
Storage temperature  
Tstg  
-55 to +150  
* PW  
10 ms; d  
50%.  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Symbol  
IDSS  
Testconditons  
Min  
Typ  
Max  
-10  
10  
Unit  
A
VDS=-100V,VGS=0  
VGS= 16V,VDS=0  
VDS=-5.0V,ID=-1  
Gate leakage current  
Gate cut-off voltage  
IGSS  
A
VGS(off)  
Yfs  
-1.5  
15  
-2.0  
22  
60  
37  
17  
9
-2.5  
V
A
Forward transfer admittance  
VDS=-5.0V,ID=-10mA  
VGS=-4.0V,ID=-10mA  
VGS=-10V,ID=-10mA  
ms  
100  
60  
Drain to source on-state resistance  
RDS(on)  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=-5.0V,VGS=0,f=1MHZ  
1
45  
75  
25  
80  
VGS(on)=-4V,RG=10 ,VDD=-5V,ID=-  
10mA RL=500  
Turn-off delay time  
Fall time  
td(off)  
tf  
Marking  
Marking  
H17  
1
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