是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SC-62 | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.37 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 0.5 A |
最大漏源导通电阻: | 4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ206-AZ | RENESAS |
获取价格 |
Power MOSFETs for Automotive, POMM, / | |
2SJ206-T1 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,500MA I(D),TO-243 | |
2SJ206-T1 | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal | |
2SJ206-T1-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,500MA I(D),TO-243 | |
2SJ206-T2 | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal | |
2SJ206-T2-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,500MA I(D),TO-243 | |
2SJ207 | NEC |
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P-CHANNEL MOS FET FOR SWITCHING | |
2SJ207 | KEXIN |
获取价格 |
MOS Fied Effect Transistor | |
2SJ207-AZ | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 1A I(D), 16V, 1-Element, P-Channel, Silicon, Metal-o | |
2SJ207-T1 | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 1A I(D), 16V, 1-Element, P-Channel, Silicon, Metal-o |