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2SJ206-T1 PDF预览

2SJ206-T1

更新时间: 2024-11-07 19:55:39
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
8页 514K
描述
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,500MA I(D),TO-243

2SJ206-T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.91配置:Single
最大漏极电流 (Abs) (ID):0.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

2SJ206-T1 数据手册

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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1010  
Rectronics Corporation  
Issued by: Renesas Electronics Corporation (m)  
Send any inquiries to http://www.renesas.c

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