Datasheet > 2SJ210C

2SJ210C

更新时间： 2024-09-26 01:12:51

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
8页	162K
描述
P-CHANNEL MOSFET FOR SWITCHING

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2SJ210C 数据手册

Preliminary Data Sheet

2SJ210C

P-CHANNEL MOSFET FOR SWITCHING

R07DS1278EJ0200

Rev.2.00

Jul 08, 2015

Description

The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven

directly by a 4.5 V power source.

Features

 Directly driven by a 4.5 V power source.

 Low on-state resistance

R^DS(on)1= 2.7  MAX. (VGS = -10 V, ID = -100 mA)

R^DS(on)2= 3.2  MAX. (VGS = -4.5 V, ID = -50 mA)

Ordering Information

Part Number

Lead Plating

Packing

Package

2SJ210C-T1B-A/AT

-A : Sn-Bi , -AT : Pure Sn

3000p/Reel

SC-59 (3pMM)

Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.

Marking XG

Absolute Maximum Ratings (T^A= 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC)

VDSS

VGSS

ID(DC)

ID(pulse)

-60

∓20

∓200

C

Drain Current (pulse) ^Note

∓800

Total Power Dissipation

200

Channel Temperature

Tch

150

Storage Temperature

Tstg

55 to 150

C

Note PW  10 s, Duty Cycle  1%

R07DS1278EJ0200 Rev.2.00

Jul 08, 2015

Page 1 of 6

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与2SJ210C相关器件

型号	品牌	获取价格	描述	数据表
2SJ210C-T1B-A	RENESAS	获取价格	P-CHANNEL MOSFET FOR SWITCHING
2SJ210C-T1B-AT	RENESAS	获取价格	P-CHANNEL MOSFET FOR SWITCHING
2SJ210-L	RENESAS	获取价格	2SJ210-L
2SJ210-L-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,200MA I(D),SOT-346
2SJ210-T1B	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,200MA I(D),SOT-346
2SJ211	KEXIN	获取价格	MOS Fied Effect Transistor
2SJ211	NEC	获取价格	P-CHANNEL MOS FET FOR SWITCHING
2SJ211-A	NEC	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, P-Channel, Silicon, Meta
2SJ211-L-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,200MA I(D),SOT-346
2SJ211-T1B	RENESAS	获取价格	2SJ211-T1B