2SJ0364GQ

更新时间： 2024-11-23 13:04:23

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中文翻译

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数据手册

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2SJ0364GQ 数据手册

Silicon Junction FETs (Small Signal)

2SJ0364 (2SJ364)

Silicon P-Channel Junction FET

For analog switch

unit: mm

+0.10

–0.05

+0.1

–0.0

0.15

0.3

ꢀ Features

ꢁ Low ON-resistance

ꢁ Low-noise characteristics

(0.65) (0.65)

ꢀ Absolute Maximum Ratings (Ta = 25°C)

1.3±0.1

2.0±0.2

Parameter

Gate to Drain voltage

Drain current

Symbol

V_GDS

I_D

Ratings

Unit

10°

−20

°C

Gate current

I_G

−10

Allowable power dissipation

Channel temperature

Storage temperature

P_D

150

1: Source

2: Drain

3: Gate

T_ch

150

EIAJ: SC-70

SMini3-G1 Package

T_stg

−55 to +150

°C

Marking Symbol (Example): 4M

ꢀ Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

V_DS= −10V, V_GS= 0

min

typ

max

−6

Unit

Drain to Source cut-off current

Gate to Source leakage current

Gate to Drain voltage

I_DSS

− 0.2

I_GSS

V_GS= 30V, V_DS= 0

V_GDS

V_GSC

I_G= 10µA, V_DS= 0

Gate to Source cut-off voltage

Forward transfer admittance

Drain to Source ON-resistance

V_DS= −10V, I_D= −10µA

V_DS= −10V, I_D= −1mA, f = 1kHz

V_DS= −10mV, V_GS= 0

1.5

2.5

300

3.5

| Y_fs

1.8

Ω

R_DS(on)

Input capacitance (Common Source) C_iss

V_DS= −10V, V_GS= 0, f = 1MHz

Reverse transfer capacitance (Common Source) C_rss

^*I_DSSrank classification

Runk

I_DSS(mA)

− 0.2 to −1 − 0.6 to −1.5

4MO 4MP

−1 to −3

4MQ

−2.5 to −6

4MR

Marking Symbol

Note) The part number in the parenthesis shows conventional part number.

239

12 3

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