Datasheet > 2SJ0582

2SJ0582

更新时间： 2024-11-19 06:23:31

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科信 - KEXIN		/
页数	文件大小	规格书
2页	46K
描述
Silicon P-channel power MOSFET

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中文翻译

获取价格

数据手册

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2SJ0582 数据手册

SMD Type

TransistIoCrs

Silicon P-channel power MOSFET

2SJ0582

TO-252

Features

Unit: mm

+0.15

6.50

-0.15

+0.1

2.30

-0.1

Avalanche energy capability guaranteed

High-speed switching

+0.2

5.30

-0.2

+0.8

0.50

-0.7

No secondary breakdown

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

1. Gate

2.3

4.60

+0.15

-0.15

2. Drain

3. Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

-200

Peak Drain Current

I^DP

Avalanche Energy Capability *

Power Dissipation T^C= 25

Power Dissipation

E^AS

P^D

Channel Temperature

Storage Temperature

* L = 5 mH, IL = 2 A, 1 pulse

Tch

Tstg

150

-55 to +150

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