2SJ0536G

更新时间： 2024-11-19 13:04:23

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
2页	34K
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中文翻译

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数据手册

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2SJ0536G 数据手册

Silicon MOS FETs (Small Signal)

2SJ0536

Silicon P-Channel MOS FET

Secondary battery pack (Li ion battery, etc.)

For switching

unit: mm

2.1±0.1

0.425

1.25±0.1

0.425

■ Features

● High-speed switching

● S-mini type package, allowing downsizing of the sets and auto-

matic insertion through the tape/magazine packing.

● Low-voltage drive (V_th: −1 to 2V)

● Low Ron

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage

Gate to Source voltage

Drain current

Symbol

V_DS

V_GSO

I_D

Ratings

−30

Unit

0.2±0.1

±20

1: Gate

2: Source

3: Drain

EIAJ: SC-70

S-Mini Type Package (3-pin)

−100

°C

Max drain current

I_DP

−200

Marking Symbol: 2C

Allowable power dissipation

Channel temperature

Storage temperature

P_D

150

T_ch

150

T_stg

−55 to +150

°C

■ Electrical Characteristics (Ta = 25°C)

Parameter

Drain current

Symbol

I_DSS

Conditions

min

typ

max

− 0.1

±1

Unit

µA

V_DS= −30V, V_GS= 0

Gate cut-off current

Gate threshold voltage

Forward transfer admittance

Drain to source ON-resistance

Turn-on time

I_GSS

V_GS= ±20V, V_DS= 0

V_th

V_DS= −5V, I_D= −1µA

−1

−2

| Y_fs|

R_DS(on)

t_on

V_DS= −5V, I_D= −10mA

Ω

V_GS= −5V, I_D= −10mA

100

V_DD= −5V, V_GS= −5 to 0V, R_L= 200Ω

µs

Turn-off time

t_off

µs

中文翻译

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