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2SJ104-BL PDF预览

2SJ104-BL

更新时间: 2024-02-09 01:31:53
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
5页 168K
描述
TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1D, SC-43, 3 PIN, FET General Purpose Small Signal

2SJ104-BL 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.29配置:SINGLE
FET 技术:JUNCTIONJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:P-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Small Signal
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ104-BL 数据手册

 浏览型号2SJ104-BL的Datasheet PDF文件第2页浏览型号2SJ104-BL的Datasheet PDF文件第3页浏览型号2SJ104-BL的Datasheet PDF文件第4页浏览型号2SJ104-BL的Datasheet PDF文件第5页 
                                                        
                                                        
                                                                     
                                                                     
2SJ104  
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type  
2SJ104  
For Audio Amplifier, Analog Switch, Constant Current  
and Impedance Converter Applications  
Unit: mm  
·
·
·
High input impedance: I  
= 1.0 nA (max) (V  
GS  
DSS  
= 25 V)  
GSS  
= 40 (typ.) (I  
Low R  
DS (ON)  
= 5 mA)  
Complimentary to 2SK364  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Gate-drain voltage  
V
25  
-10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
400  
D
T
125  
j
T
-55~125  
°C  
stg  
JEDEC  
JEITA  
TO-92  
SC-43  
TOSHIBA  
2-5F1D  
Weight: 0.21 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= 25 V, V = 0  
¾
¾
¾
1.0  
nA  
V
GSS  
GS  
DS  
DS  
Gate-drain breakdown voltage  
V
V
= 0, I = 100 mA  
25  
¾
(BR) GDS  
G
I
DSS  
Drain current  
V
= -10 V, V  
= 0  
GS  
-2.6  
0.2  
12  
¾
¾
30  
-20  
2.0  
¾
mA  
V
DS  
(Note 1)  
Gate-source cut-off voltage  
Forward transfer admittance  
V
V
= -10 V, I = -0.1 mA  
D
GS (OFF)  
DS  
DS  
= -10 V, V  
= 0, f = 1 kHz  
GS  
ïY ï  
fs  
mS  
(Note 2)  
= 0, f = 1 MHz  
Input capacitance  
C
iss  
V
V
V
= -10 V, V  
¾
¾
¾
105  
32  
¾
¾
¾
pF  
pF  
W
DS  
DG  
DS  
GS  
Reverse transfer capacitance  
Drain-source ON resistance  
C
rss  
= -10 V, I = 0, f = 1 MHz  
D
R
= -10 mV, V  
= 0  
GS  
(Note 2)  
40  
DS (ON)  
Note 1: I  
classification GR: -2.6~-6.5 mA, BL: -6~-12 mA, V: -10~-20 mA  
DSS  
Note 2: Condition of the typical value I  
= -5 mA  
DSS  
1
2003-03-25  

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