2SJ107
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ107
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
Unit: mm
•
•
•
•
High input impedance: I
= 1.0 nA (max) (V
= 25 V)
GSS
GS
Low R
: R
= 40 Ω (typ.)
DS (ON) DS (ON)
Small package
Complementary to 2SK366
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Symbol
Rating
Unit
V
25
−10
V
GDS
Gate current
I
mA
mW
°C
G
Drain power dissipation
Junction temperature
Storage temperature range
P
200
D
T
j
125
T
stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= 25 V, V = 0
DS
⎯
⎯
⎯
1.0
nA
V
GSS
GS
DS
Gate-drain breakdown voltage
V
= 0, I = 100 μA
25
⎯
(BR) GDS
G
I
DSS
Drain current
V
= −10 V, V
= 0
−2.6
0.2
12
⎯
⎯
30
−20
2.0
⎯
mA
V
DS
GS
(Note 1)
Gate-source cut-off voltage
Forward transfer admittance
V
V
V
= −10 V, I = −0.1 μA
GS (OFF)
DS
DS
D
= −10 V, V
= 0, f = 1 kHz
GS
⎪Y ⎪
fs
mS
(Note 2)
= 0, f = 1 MHz
Input capacitance
C
V
V
V
= −10 V, V
⎯
⎯
⎯
105
32
⎯
⎯
⎯
pF
pF
Ω
iss
DS
GD
DS
GS
Reverse transfer capacitance
Drain-source ON resistance
C
= 10 V, I = 0, f = 1 MHz
D
rss
R
= −10 mV, V
= 0
GS
(Note 2)
40
DS (ON)
Note 1:
I
classification GR: −2.6~−6.5 mA, BL: −6~−12 mA, V: −10~−20 mA
DSS
Note 2: Condition of the typical value I
= −5 mA
DSS
1
2007-11-01