Datasheet > 2SJ108_07

2SJ108_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		音频放大器
页数	文件大小	规格书
5页	648K
描述
Low Noise Audio Amplifier Applications

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2SJ108_07 数据手册

2SJ108

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type

2SJ108

Low Noise Audio Amplifier Applications

Unit: mm

•

Recommended for first stages of EQ amplifiers and MC head

amplifiers.

High |Y |: |Y | = 22 mS (typ.)

= −10 V, V

= 0, I

= −3 mA)

DSS

•

Low noise: En = 0.95 nV/Hz^1/2(typ.)

(V = −10 V, I = −1 mA, f = 1 kHz)

•

High input impedance: I

= 1.0 nA (max) (V

= 25 V)

GSS

Complementary to 2SK370

Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

−10

GDS

Gate current

°C

Drain power dissipation

Junction temperature

Storage temperature range

200

125

JEDEC

JEITA

―

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-4E1C

Weight: 0.13 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate cut-off current

Symbol

Test Condition

Min

Typ.

Max

Unit

= 25 V, V = 0

⎯

1.0

GSS

Gate-drain breakdown voltage

= 0, I = 100 μA

⎯

(BR) GDS

DSS

(Note)

Drain current

= −10 V, V

= 0

−2.6

⎯

−20

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

= −10 V, I = −0.1 μA

0.15

⎯

2.0

⎯

GS (OFF)

⎪Y ⎪

= −10 V, V

= 0, f = 1 kHz

= 0, f = 1 MHz

⎯

105

iss

rss

Reverse transfer capacitance

= 10 V, I = 0, f = 1 MHz

⎯

= −10 V, I = −1 mA, R = 1 kΩ,

NF (1)

NF (2)

⎯

1.0

0.5

f = 10 Hz

Noise figure

= −10 V, I = −1 mA, R = 1 kΩ,

f = 1 kHz

Note: I

classification GR: −2.6~−6.5 mA, BL: −6.0~−12 mA, V: −10~−20 mA

DSS

2007-11-01

12 3 4 5

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