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2SJ107-GR PDF预览

2SJ107-GR

更新时间: 2024-02-28 20:55:04
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
5页 182K
描述
TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal

2SJ107-GR 技术参数

生命周期:Active包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.21.00.95风险等级:5.3
配置:SINGLEFET 技术:JUNCTION
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified子类别:FET General Purpose Small Signal
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ107-GR 数据手册

 浏览型号2SJ107-GR的Datasheet PDF文件第2页浏览型号2SJ107-GR的Datasheet PDF文件第3页浏览型号2SJ107-GR的Datasheet PDF文件第4页浏览型号2SJ107-GR的Datasheet PDF文件第5页 
                                                        
                                                        
                                                                     
                                                                     
2SJ107  
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type  
2SJ107  
For Audio Amplifier, Analog Switch, Constant Current  
Unit: mm  
and Impedance Converter Applications  
·
·
·
·
High input impedance: I  
= 1.0 nA (max) (V  
GSS GS  
= 40 (typ.)  
= 25 V)  
Low R  
: R  
DS (ON) DS (ON)  
Small package  
Complementary to 2SK366  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Gate-drain voltage  
V
25  
-10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
200  
D
T
125  
j
T
-55~125  
°C  
stg  
JEDEC  
JEITA  
TOSHIBA  
2-4E1C  
Weight: 0.13 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= 25 V, V = 0  
¾
¾
¾
1.0  
nA  
V
GSS  
GS  
DS  
DS  
Gate-drain breakdown voltage  
V
V
= 0, I = 100 mA  
25  
¾
(BR) GDS  
G
I
DSS  
Drain current  
V
= -10 V, V  
= 0  
GS  
-2.6  
0.2  
12  
¾
¾
30  
-20  
2.0  
¾
mA  
V
DS  
(Note 1)  
Gate-source cut-off voltage  
Forward transfer admittance  
V
V
= -10 V, I = -0.1 mA  
D
GS (OFF)  
DS  
DS  
= -10 V, V  
= 0, f = 1 kHz  
GS  
ïY ï  
fs  
mS  
(Note 2)  
= 0, f = 1 MHz  
Input capacitance  
C
iss  
V
V
V
= -10 V, V  
¾
¾
¾
105  
32  
¾
¾
¾
pF  
pF  
W
DS  
GD  
DS  
GS  
Reverse transfer capacitance  
Drain-source ON resistance  
C
rss  
= 10 V, I = 0, f = 1 MHz  
D
R
= -10 mV, V  
= 0  
GS  
(Note 2)  
40  
DS (ON)  
Note 1: I  
classification GR: -2.6~-6.5 mA, BL: -6~-12 mA, V: -10~-20 mA  
DSS  
Note 2: Condition of the typical value I  
= -5 mA  
DSS  
1
2003-03-25  

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