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2SJ106GRTE85R

更新时间： 2024-11-23 14:27:43
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
4页 284K
描述
TRANSISTOR P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal

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中文翻译

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2SJ106GRTE85R 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknownHTS代码：8541.21.00.95
风险等级：5.66Is Samacsys：N
配置：SINGLEFET 技术：JUNCTION
JEDEC-95代码：TO-236JESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
工作模式：DEPLETION MODE最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：P-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SJ106GRTE85R 数据手册

 浏览型号2SJ106GRTE85R的Datasheet PDF文件第2页浏览型号2SJ106GRTE85R的Datasheet PDF文件第3页浏览型号2SJ106GRTE85R的Datasheet PDF文件第4页 
2SJ106  
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type  
2SJ106  
Audio Frequency Amplifier Applications  
Analog Switch Applications  
Unit: mm  
Constant Current Applications  
Impedance Converter Applications  
•
•
•
•
High breakdown voltage: V  
= 50 V  
GDS  
High input impedance: I  
= 1.0 nA (max) (V  
= 30 V)  
GSS  
GS  
Low R  
: R  
= 270 Ω (typ.) (I  
= −5 mA)  
DS (ON) DS (ON)  
DSS  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
50  
−10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
150  
D
T
j
125  
T
stg  
−55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-236MOD  
SC-59  
TOSHIBA  
2-3F1B  
Weight: 0.012 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= 30 V, V = 0  
⎯
⎯
⎯
1.0  
nA  
V
GSS  
GS  
DS  
DS  
Gate-drain breakdown voltage  
V
= 0, I = 100 μA  
50  
⎯
(BR) GDS  
G
I
DSS  
(Note)  
Drain current  
V
= −10 V, V  
= 0  
−1.2  
⎯
−14  
mA  
DS  
GS  
Gate-source cut-off voltage  
Forward transfer admittance  
V
V
V
V
= −10 V, I = −0.1 μA  
0.3  
1.0  
⎯
6.0  
V
GS (OFF)  
DS  
DS  
D
⎪Y ⎪  
fs  
= −10 V, V  
= 0, f = 1 kHz  
GS  
4.0  
⎯
mS  
= −10 mV, V  
= −5 mA  
= 0  
GS  
DS  
Drain-source on resistance  
R
⎯
270  
⎯
Ω
DS (ON)  
I
DSS  
Input capacitance  
C
V
V
= −10 V, V  
= 0, f = 1 MHz  
⎯
⎯
18  
⎯
⎯
pF  
pF  
iss  
DS  
DG  
GS  
Reverse transfer capacitance  
C
= −10 V, I = 0, f = 1 MHz  
3.6  
rss  
D
Note: I  
classification Y: −1.2~−3.0 mA, GR (G): −2.6~−6.5 mA, BL (L): −6~−14 mA  
DSS  
Marking  
1
2007-11-01  
1234

中文翻译

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