是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.34 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1.5 A | 集电极-发射极最大电压: | 80 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 4000 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 1 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD986-L-AZ | RENESAS |
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暂无描述 |
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2SD986M | NEC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1.5A I(C) | TO-126 |
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2SD986M | ISC |
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Transistor |
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2SD986-M | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon |
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2SD986-M-AZ | RENESAS |
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Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon |
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2SD986-M-AZ | NEC |
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Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon |
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2SD987 | ETC |
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NPN SILICON TRIPLE DIFFUSED DARLINGTON TRANSISTOR |
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2SD991 | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 6A I(C) | TO-220AB |
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2SD991(K) | HITACHI |
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POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN |
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2SD991K | ETC |
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