Datasheet > 2SD992-Z

2SD992-Z

更新时间： 2024-09-14 06:22:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	39K
描述
NPN Silicon Epitaxial Transistor

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中文翻译

获取价格

数据手册

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2SD992-Z 数据手册

SMD Type

Transistors

NPN Silicon Epitaxial Transistor

2SD992-Z

TO-252

Unit: mm

6.50^+0.15

2.30^+0.1

Features

-0.15

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Low VCE(sat).

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current (DC)

Collector Current (pulse) *

Total power dissipation

Junction temperature

Storage temperature

I^CP

P^T

T^j

150

Tstg

-55 to +150

* Pulse Test PW

10ms, Duty Cycle

50%.

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

VCB = 20 V, IE = 0

V^CE= 0.5 V, IC = 0.1 A

V^CE= 0.5 V, IC = 2.0 A

200

DC current gain *

h^FE

Collector saturation voltage *

Base saturation voltage *

V^CE(sat)IC = 2.0 A, IB = 40 mA

V^BE(sat)IC = 2.0 A, IB = 40 mA

0.3

0.5

1.5

0.95

* Pulsed: PW

350 ìs, duty cycle

hFE Classification

Marking

hFE

35 80

60 120

80 120

100 200

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