Datasheet > 2SD880O(TO-220)

2SD880O(TO-220)

更新时间： 2024-11-20 14:47:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	185K
描述
Transistor

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技术参数
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2SD880O(TO-220) 技术参数

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2SD880O(TO-220) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 Plastic-Encapsulate Transistors

2SD880 TRANSISTOR (NPN)

TO-220

FEATURES

Low frequency power amplifier

Complement to 2SB834

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

1.5

℃

T_J

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=100µA, I_E=0

I_C=50mA, I_B=0

I_E= 100µA, I_C=0

V_CB=60V, I_E=0

100

300

µA

I_EBO

V_EB=7V, I_C=0

h_FE

V_CE=5V, I_C=500mA

I_C=3A, I_B=300mA

I_C=0.5A, V_CE= 5V

V_CE=5 V, I_C=500mA

V_CB=10V, I_E=0, f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

V_{CE (sat)}

V_BE

Transition Frequency

f _T

MHz

µs

Collector output capacitance

Turn on time

C_ob

t_on

0.8

1.5

0.8

I_B1=-I_B2=0.2A, I_C=2A

Storage time

t _s

µs

V_CC=30V, PW=20µs

Fall time

t _f

µs

CLASSIFICATION OF h_FE

Rank

60-120

100-200

150-300

Range

A,Mar,2011

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