Datasheet > 2SD862

2SD862

更新时间： 2024-10-31 22:49:27

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管
页数	文件大小	规格书
1页	67K
描述
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

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2SD862 数据手册

2SD862

Silicon Epitaxial Planar Transistor

GENERAL DESCRIPTION

Silicon NPN high frequency, Low Vce(sat) middle

power transistors in a plastic envelope, primarily for

use in audio and general purpose

TO-126

QUICK REFERENCE DATA

SYMBOL

V_CESM

V_CEO

I_C

PARAMETER

CONDITIONS

TYP

MAX

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Collector current (DC)

V_BE= 0V

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Diode forward voltage

I_CM

P_tot

V_CEsat

V_F

t_f

1.5

T_mb25

0.5

2.0

I_C= 1.5A; I_B= 0.15A

I_F= 1.5A

Fall time

LIMITING VALUES

SYMBOL

V_CESM

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

MIN

MAX

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Emitter-base oltage (open colloctor)

Collector current (DC)

V_BE= 0V

Base current (DC)

0.5

I_B

P_tot

Total power dissipation

Tmb 25

Storage temperature

-55

150

T_stg

T_j

Junction temperature

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

V_CB=20V

TYP

MAX

0.1

UNIT

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter breakdown voltage

Collector-emitter saturation voltages

DC current gain

I_CBO

I_EBO

V_(BR)CEO

V_CEsat

h_FE

f_T

V_EB=5V

0.2

I_C=1mA

I_C= 1.5A; I_B= 0.15A

I_C= 100mA; V_CE= 2V

I_C= 0.5A; V_CE= 12V

V_CB= 10V

0.5

400

Transition frequency at f = 5MHz

Collector capacitance at f = 1MHz

On times

MHz

C_c

t_on

Tum-off storage time

t_s

Fall time

t_f

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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