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2SD2580 PDF预览

2SD2580

更新时间: 2024-02-26 23:37:14
品牌 Logo 应用领域
三洋 - SANYO 电视输出应用
页数 文件大小 规格书
4页 46K
描述
Color TV Horizontal Deflection Output Applications

2SD2580 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:TO-3PML包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.29.00.95风险等级:5.25
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED最大集电极电流 (IC):10 A
集电极-发射极最大电压:800 V配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):5JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):70 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SD2580 数据手册

 浏览型号2SD2580的Datasheet PDF文件第2页浏览型号2SD2580的Datasheet PDF文件第3页浏览型号2SD2580的Datasheet PDF文件第4页 
Ordering number:5796  
NPN Triple Diffused Planar Silicon Transistor  
2SD2580  
Color TV Horizontal Deflection  
Output Applications  
Features  
Package Dimensions  
unit:mm  
· High speed.  
· High breakdown voltage (V  
· High reliability (Adoption of HVP process).  
· Adoption of MBIT process.  
=1500V).  
CBO  
2039D  
[2SD2580]  
16.0  
5.6  
3.4  
· On-chip damper diode.  
3.1  
2.8  
2.0  
2.0  
1.0  
0.6  
1
2
3
1:Base  
2:Collector  
3:Emitter  
5.45  
5.45  
SANYO:TO3PML  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
1500  
800  
6
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
CEO  
V
V
EBO  
I
10  
A
C
Collector Current (pulse)  
Collector Dissipation  
I
30  
A
CP  
P
3.0  
70  
W
W
C
Tc=25˚C  
Junction Temperature  
Storage Temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditons  
Unit  
min  
max  
10  
Collector Cutoff Current  
I
V
V
I
=800V, I =0  
µA  
mA  
V
CBO  
CB  
E
Collector Cutoff Current  
Collector Sustain Voltage  
Emitter Cutoff Current  
I
=1500V, R =0  
BE  
1.0  
CES  
CE  
V
=100mA, I =0  
B
800  
40  
CEO(sus)  
C
I
V
=4V, I =0  
130  
mA  
EBO  
EB  
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
O3098TS (KOTO) TA-1137 No.5796-1/4  

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