2SD2573

更新时间： 2024-11-17 22:52:47

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	79K
描述
Silicon NPN triple diffusion planar type

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD2573 数据手册

Power Transistors

2SD2573

Silicon NPN triple diffusion planar type

For high current amplification, power amplification

Unit: mm

7.5 0.2

4.5 0.2

■ Features

• Low collector-emitter saturation voltage V_CE(sat)

• Allowing supply with the radial taping

0.65 0.1

0.85 0.1

1.0 0.1

0.8 C

■ Absolute Maximum Ratings T_a= 25°C

0.7 0.1

Parameter

Symbol

Rating

Unit

1.15 0.2

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

0.5 0.1

0.4 ^0.1

0.8 C

Collector current

I_C

I_CP

P_C

T_j

1: Emitter

2: Collector

3: Base

Peak collector current

Collector power dissipation T_C= 25°C

Junction temperature

1.5

2.5 0.2

°C

MT-3-A1 Package

150

Storage temperature

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio ^*

Collector-emitter saturation voltage

Transition frequency

I_C= 25 mA, I_B= 0

V_CB= 80 V, I_E= 0

V_CE= 40 V, I_B= 0

V_EB= 6 V, I_C= 0

V_CE= 4 V, I_C= 0.5 A

100

2500

1.0

µA



I_CEO

I_EBO

h_FE

500

V_CE(sat)I_C= 2 A, I_B= 0.05 A

f_TV_CE= 12 V, I_C= 0.2 A, f = 10 MHz

MHz

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE

500 to 1000

800 to 1 500 1200 to 2500

Publication date: September 2003

SJD00278BED

12 3

中文翻译

下载PDF

与2SD2573相关器件

型号	品牌	获取价格	描述	数据表
2SD2573P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-126VAR
2SD2573Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-126VAR
2SD2573R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-126VAR
2SD2575	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For low-frequency power amplification)
2SD2576	ROHM	获取价格	Power Transistor
2SD2576F	ROHM	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220, Plastic/
2SD2578	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SD2578	ISC	获取价格	Silicon NPN Power Transistors
2SD2578	SANYO	获取价格	Color TV Horizontal Deflection Output Applications
2SD2579	SAVANTIC	获取价格	Silicon NPN Power Transistors