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2SD2573P PDF预览

2SD2573P

更新时间: 2024-11-19 23:20:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管放大器
页数 文件大小 规格书
3页 60K
描述
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-126VAR

2SD2573P 数据手册

 浏览型号2SD2573P的Datasheet PDF文件第2页浏览型号2SD2573P的Datasheet PDF文件第3页 
Power Transistors  
2SD2573  
Silicon NPN triple diffusion planar type  
Unit: mm  
7.5±±.ꢀ  
4.5±±.ꢀ  
For high current amplification, power amplification  
I Features  
Low collector to emitter saturation voltage VCE(sat)  
Allowing automatic insertion with radial taping  
±.65±±.1  
±.85±±.1  
1.±±±.1  
±.8 C  
±.8 C  
±.7±±.1  
±.7±±.1  
I Absolute Maximum Ratings TC = 25°C  
1.15±±.ꢀ  
1.15±±.ꢀ  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
80  
±.5±±.1  
±.4±±.1  
60  
V
±.8 C  
1
3
6
V
6
A
1: Base  
2: Collector  
3: Emitter  
ꢀ.5±±.ꢀ  
ꢀ.5±±.ꢀ  
IC  
3
1.5  
A
Collector power dissipation (TC = 25°C)  
Junction temperature  
Storage temperature  
PC  
W
°C  
°C  
MT-3 (MT3 Type Package)  
Tj  
150  
Tstg  
55 to +150  
I Electrical Characteristics TC = 25°C  
Parameter  
Symbol  
ICBO  
Conditions  
Min  
Typ  
Max  
100  
100  
100  
Unit  
µA  
µA  
µA  
V
Collector cutoff current  
VCB = 80 V, IE = 0  
VCE = 40 V, IB = 0  
VEB = 6 V, IC = 0  
ICEO  
Emitter cutoff current  
IEBO  
Collector to emitter voltage  
Forward current transfer ratio *  
Collector to emitter saturation voltage  
Transition frequency  
VCEO  
hFE  
IC = 25 mA, IB = 0  
VCE = 4 V, IC = 0.5 A  
IC = 2 A, IB = 0.05 A  
60  
500  
2 500  
1.0  
VCE(sat)  
fT  
V
VCE = 12 V, IC = 0.2 A, f = 200 MHz  
50  
MHz  
Note) : Rank classification  
*
Rank  
P
Q
R
hFE  
500 to 1 000 800 to 1 500 1 200 to 2 500  
1

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