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2SD2568TLP

更新时间: 2024-11-18 20:43:35
品牌 Logo 应用领域
罗姆 - ROHM 晶体管
页数 文件大小 规格书
1页 42K
描述
Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, CPT3, 3 PIN

2SD2568TLP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:CPT3, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.73
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):82
JESD-30 代码:R-PSSO-G2JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):10 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Copper (Sn98Cu2)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):13.5 MHzBase Number Matches:1

2SD2568TLP 数据手册

  
2SD2568  
Transistors  
Power Transistor(400V,0.5A)  
2SD2568  
!Features  
CEO=  
1) High breakdown voltage.(BV 400V)  
!Absolute maximum ratings (Ta = 25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
400  
400  
7
Unit  
VCBO  
VCEO  
VEBO  
V
V
V
A
I
C
C
0.5  
10  
Collector power dissipation  
Junction temperature  
P
W(Tc=25°C)  
Tj  
150  
°C  
°C  
Storage temperature  
Tstg  
55 ∼ +150  
!Packaging specifications and hFE  
Type  
2SD2568  
CPT3  
PQ  
Package  
hFE  
Code  
TL  
2500  
Basic ordering unit (pieces)  
!Electrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
0.05  
13.5  
8
10  
10  
0.5  
1.5  
270  
V
V
I
I
I
C
C
E
=
=
=
50µA  
1mA  
400  
400  
7
V
50µA  
I
CBO  
82  
µA  
µA  
V
V
V
CB = 400  
EB = 6  
V
Emitter cutoff current  
I
EBO  
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
DC current transfer ratio  
V
CE(sat)  
I
I
C
= 100mA ,  
= 100mA ,  
I
I
B
B
= 10mA  
= 10mA  
V
BE(sat)  
V
C
hFE  
MHz  
pF  
V
V
V
CE/IC = 5V/50mA  
CE  
Transition frequency  
f
T
=
5V , I  
E
=
E
50mA , f = 10MHz  
0A , f 1MHz  
Output capacitance  
Cob  
CB  
=
10V , I  
=
=

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