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2SD2384-B PDF预览

2SD2384-B

更新时间: 2024-11-25 21:21:35
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网放大器晶体管
页数 文件大小 规格书
4页 165K
描述
TRANSISTOR 7 A, 140 V, NPN, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power

2SD2384-B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:2-21F1A, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.41
外壳连接:COLLECTOR最大集电极电流 (IC):7 A
集电极-发射极最大电压:140 V配置:DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):9000JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:100 W最大功率耗散 (Abs):100 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzVCEsat-Max:2.5 V
Base Number Matches:1

2SD2384-B 数据手册

 浏览型号2SD2384-B的Datasheet PDF文件第2页浏览型号2SD2384-B的Datasheet PDF文件第3页浏览型号2SD2384-B的Datasheet PDF文件第4页 
2SD2384  
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)  
2SD2384  
Power Amplifier Applications  
Unit: mm  
High breakdown voltage: V  
= 140 V (min)  
CEO  
Complementary to 2SB1555  
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
140  
140  
5
V
V
V
A
A
CBO  
CEO  
EBO  
I
7
C
Base current  
I
B
0.1  
Collector power dissipation  
(Tc = 25°C)  
P
100  
W
C
Junction temperature  
Storage temperature range  
T
150  
°C  
°C  
j
JEDEC  
JEITA  
T
stg  
55 to 150  
Equivalent Circuit  
TOSHIBA  
2-21F1A  
Weight: 9.75 g (typ.)  
COLLECTOR  
BASE  
100 Ω  
EMITTER  
1
2004-07-07  

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