Datasheet > 2SD2375P

2SD2375P

更新时间： 2024-09-15 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	63K
描述
TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C) \| TO-220AB

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中文翻译

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数据手册

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2SD2375P 数据手册

Power Transistors

2SD2375

Silicon NPN triple diffusion planar type

Unit: mm

4.6±±.ꢀ

For power amplification with high forward current transfer ratio

9.9±±.ꢁ

ꢀ.9±±.ꢀ

φ ꢁ.ꢀ±±.1

I Features

•

High forward current transfer ratio h_FEwhich has satisfactory

linearity

•

Full-pack package which can be installed to the heat sink with one

screw

1.4±±.ꢀ

1.6±±.ꢀ

ꢀ.6±±.1

±.8±±.1

±.55±±.15

I Absolute Maximum Ratings T_C= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

ꢀ.54±±.ꢁ±

5.±8±±.5±

ꢀ

ꢁ

1: Base

2: Collector

3: Emitter

TO-220D Package

I_C

Base current

I_B

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

100

Unit

µA

Collector cutoff current

V_CB= 80 V, I_E= 0

I_CEO

V_CE= 40 V, I_B= 0

Emitter cutoff current

I_EBO

V_EB= 6 V, I_C= 0

Collector to emitter voltage

Forward current transfer ratio ^*

Collector to emitter saturation voltage

Transition frequency

V_CEO

h_FE

I_C= 25 mA, I_B= 0

V_CE= 4 V, I_C= 0.5 A

I_C= 2 A, I_B= 0.05 A

V_CE= 12 V, I_C= 0.2 A, f = 10 MHz

500

1 500

V_CE(sat)

f_T

MHz

Note) : Rank classification

Rank

h_FE

500 to 1 000 800 to 1 500

Ordering can be made by the common rank (PQ rank h_FE= 500 to 1 500) in the rank classification.

12 3

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