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2SD2383 PDF预览

2SD2383

更新时间: 2024-02-27 00:52:45
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管光电二极管高压
页数 文件大小 规格书
4页 115K
描述
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING

2SD2383 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
最大集电极电流 (IC):0.02 A配置:Single
最小直流电流增益 (hFE):100JESD-609代码:e6
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Bismuth (Sn98Bi2)
Base Number Matches:1

2SD2383 数据手册

 浏览型号2SD2383的Datasheet PDF文件第2页浏览型号2SD2383的Datasheet PDF文件第3页浏览型号2SD2383的Datasheet PDF文件第4页 
DATA SHEET  
SILICON TRANSISTOR  
2SD2383  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-VOLTAGE SWITCHING  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
The 2SD2383 is an element realizing high voltage in small  
dimension. This transistor is ideal for downsizing sets  
requiring high voltage.  
2.8 ±±.2  
+±.1  
–±.15  
±.65  
1.5  
2
FEATURES  
High voltage  
Small dimension  
3
1
ORDERING INFORMATION  
Marking  
PART NUMBER  
2SD2383  
PACKAGE  
SC-59  
Marking: N1  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current (DC)  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
VCBO  
VCEO  
VEBO  
IC(DC)  
PT  
400  
300  
V
V
1. Emitter  
2. Base  
3. Collector  
5.0  
V
20  
mA  
mW  
°C  
°C  
200  
Tj  
150  
Tstg  
55 to +150  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D16154EJ2V0DS00 (2nd edition)  
Date Published August 2004 NS CP(K)  
Printed in Japan  
The mark  
shows major revised points.  
2002  

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