生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.57 |
其他特性: | BUILT IN BIAS RESISTOR | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 50 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
功耗环境最大值: | 1.3 W | 最大功率耗散 (Abs): | 1.3 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2101 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2SD2101 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2SD2101 | RENESAS |
获取价格 |
Silicon NPN Triple Diffused | |
2SD2101 | HITACHI |
获取价格 |
Silicon NPN Triple Diffused | |
2SD2101 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2SD2101_15 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2SD2101_2015 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2SD2101-E | RENESAS |
获取价格 |
10A, 200V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220FM, 3 PIN | |
2SD2102 | HITACHI |
获取价格 |
SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMFPLIFIER | |
2SD2103 | ETC |
获取价格 |