Datasheet > 2SD1992AR

2SD1992AR

更新时间： 2024-11-23 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	80K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| SC-71

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2SD1992AR 数据手册

Transistors

2SD1992A

Silicon NPN epitaxial planer type

Unit: mm

6.9 0.1

4.0

2.5 0.1

1.05

0.05

For general amplification

(1.45)

0.8

0.7

Complementary to 2SB1321A

I Features

0.65 max.

• Low collector to emitter saturation voltage V_CE(sat)

• Allowing supply with the radial taping

0.45⁺−⁰0.^.0¹5

2.5 0.5 2.5 0.5

I Absolute Maximum Ratings T_a= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

Note) In addition to the

lead type shown in

the upper figure,

the type as shown

in the lower figure

is also available.

1: Emitter

2: Collector

3: Base

MT1 Type Package

500

I_C

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

600

T_j

150

1.2 0.1

T_stg

−55 to +150

0.65

max.

0.1

0.45_−0.05

(HW Type)

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

0.1

Unit

µA

Collector cutoff current

V_CB= 20 V, I_E= 0

I_CEO

V_CE= 20 V, I_B= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

I_E= 10 µA, I_C= 0

Forward current transfer ratio

h_FE1

h_FE2

V_CE= 10 V, I_C= 10 mA

V_CE= 10 V, I_C= 500 mA

I_C= 300 mA, I_B= 30 mA

V_CB= 10 V, I_E= −10 mA, f = 200 MHz

V_CB= 10 V, I_E= 0, f = 1 MHz

340

0.6

0.35

200

Collector to emitter saturation voltage ^*

V_CE(sat)

f_T

MHz

Transition frequency

Collector output capacitance

C_ob

Note) 1: Pulse measurement

2: Rank classification

Rank

No-rank

h_FE1

85 to 170

120 to 240

170 to 340

85 to 340

Product of no-rank is not classified and have no indication for rank.

12 3 4

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与2SD1992AR相关器件

型号	品牌	获取价格	描述	数据表
2SD1992AS	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| SC-71
2SD1992A-SZ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1992Q	PANASONIC	获取价格	Transistor
2SD1992S	PANASONIC	获取价格	Transistor
2SD1993	PANASONIC	获取价格	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
2SD1993-HW	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon
2SD1993R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
2SD1993S	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
2SD1993-SZ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon
2SD1993T	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO