Datasheet > 2SD1918

2SD1918

更新时间： 2024-02-08 09:21:40

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描述
Silicon NPN Epitaxial

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中文翻译

获取价格

数据手册

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2SD1918 数据手册

SMD Type

Transistors

Silicon NPN Epitaxial

2SD1918

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

Features

-0.2

High breakdown voltage.(BVCEO = 160V)

Low collector output capacitance.Typ. 20pF at VCB = 10V

High transition frequency.(fT = 80MHZ)

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

160

Collector-emitter voltage

Emitter-base voltage

160

1.5

A(DC)

Collector current

I^C

A(Pulse) *

Collector power dissipation

P^C

T^C= 25

Junction temperature

Storage temperature

* Pw=200msec duty=1/2

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

Symbol

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CBO

Testconditons

Min

160

Typ

Max

Unit

IC = 50ìA

IC = 1mA

IE = 50ìA

VCB = 120V

ìA

Emitter cutoff current

I^EBO

VEB = 4V

Collector to emitter saturation voltage *

Base to emitter voltage *

V^CE(sat)

V^BE(sat)

h^FE

IC/IB = 1A/0.1A

VCE/IC = 5V/0.1A

1.5

390

DC current transfer ratio

120

Transition frequency

f^T

VCE = 5V , IE = -0.1A , f = 30MHz

VCB = 10V , IE = 0A , f = 1MHz

MHz

Output capacitance

C^ob

* Measured using pulse current.

hFE Classification

Rank

hFE

120 to 270

180 to 390

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与2SD1918相关器件

型号	品牌	获取价格	描述	数据表
2SD1918/N	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1918/NP	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1918/NQ	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1918/P	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1918/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1918/Q	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1918_09	ROHM	获取价格	Power Transistor (160V , 1.5A)
2SD1918_10	ROHM	获取价格	Power Transistor (160V , 1.5A)
2SD1918_15	KEXIN	获取价格	NPN Transistors
2SD1918F5	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 1.5A I(C) \| TO-252