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2SD1918R-CH PDF预览

2SD1918R-CH

更新时间: 2024-11-24 14:53:39
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
5页 239K
描述
功率三极管

2SD1918R-CH 数据手册

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2SD1918R-CH  
NPN Silicon Epitaxial Planar Power Transistor  
Features  
• AEC-Q101 Qualified  
• High breakdown voltage  
• Low collector output capacitance  
• High transition frequency  
• Halogen and Antimony Free(HAF), RoHS compliant  
1.Base 2.Collector 3.Emitter  
TO-252 Plastic Package  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
160  
160  
6
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
V
V
Collector Current  
1.5  
3
A
Peak Collector Current, Pulsed  
ICM  
A
Ta = 25℃  
Tc = 25℃  
1
10  
Power Dissipation  
W
PD  
Operating Junction Temperature  
Storage Temperature Range  
Tj  
150  
Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
125  
Unit  
/W  
/W  
Thermal Resistance - Junction to Ambient 1)  
Thermal Resistance - Junction to Case  
RθJC  
12.5  
1) Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.  
®
1 / 5  
Dated: 07/06/2023 Rev: 01  

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