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2SD1918_15 PDF预览

2SD1918_15

更新时间: 2024-11-24 01:11:47
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描述
NPN Transistors

2SD1918_15 数据手册

 浏览型号2SD1918_15的Datasheet PDF文件第2页 
SMD Type  
Transistors  
NPN Transistors  
2SD1918  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
Features  
High breakdown voltage.  
Low collector output capacitance.  
High transition frequency  
Complementary to 2SB1275  
0.127  
max  
+0.1  
-0.1  
0.80  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
+0.15  
-0.15  
4.60  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
160  
160  
5
Unit  
V
VCBO  
VCEO  
VEBO  
Collector Current - Continuous  
Collector Current - Pulse  
I
C
1.5  
3
A
I
CP  
10  
Collector Power Dissipation  
Tc = 25℃  
Ta = 25℃  
P
C
W
1
Junction Temperature  
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
160  
160  
5
Ic= 100 uAI  
Ic= 1 mAI = 0  
= 100 uAI = 0  
CB= 120 V , I = 0  
EB= 4V , I =0  
E= 0  
B
I
E
C
I
CBO  
EBO  
V
V
E
1
1
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=1 A, I  
B
=100mA  
=100mA  
2
V
C
=1 A, I  
B
1.5  
390  
hFE  
V
V
V
CE= 5V, I  
CB= 10V, I  
CE= 5V, I = -100 mA,f=1MHz  
C= 100mA  
120  
Collector output capacitance  
Transition frequency  
C
ob  
T
E= 0,f=1MHz  
20  
80  
pF  
f
E
MHz  
Classification of hfe(1)  
Type  
2SD1918-Q  
120-270  
2SD1918-R  
180-390  
Range  
1
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