Datasheet > 2SD1918-R

2SD1918-R

更新时间： 2024-09-14 01:11:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1102K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1918-R 数据手册

SMD Type

Transistors

NPN Transistors

2SD1918

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

■ Features

● High breakdown voltage.

● Low collector output capacitance.

● High transition frequency

● Complementary to 2SB1275

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

+0.15

-0.15

4.60

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

160

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

1.5

Collector Power Dissipation

Tc = 25℃

Ta = 25℃

℃

Junction Temperature

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

160

Ic= 100 uA， I

Ic= 1 mA， I = 0

= 100 uA， I = 0

^CB= 120 V , I = 0

EB= 4V , I =0

E= 0

CBO

EBO

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=1 A, I

=100mA

=1 A, I

1.5

390

hFE

^CE= 5V, I

CB= 10V, I

CE= 5V, I = -100 mA,f=1MHz

C= 100mA

120

Collector output capacitance

Transition frequency

E= 0,f=1MHz

MHz

■ Classification of hfe(1)

Type

2SD1918-Q

120-270

2SD1918-R

180-390

Range

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