2SD1864N

更新时间： 2024-09-16 13:04:23

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	141K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SD1864N 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

2SD1864N 数据手册

Power Transistor (50V, 3A)

2SD1864

Features

Dimensions (Unit : mm)

1) Low V^CE(sat).

2SD1864

V^CE(sat)= 0.5V (Typ.)

(I^C/IB = 2A / 0.2A)

2) Complements the 2SB1243.

2.5 0.2

6.8 0.2

Structure

0.65Max.

Epitaxial planar type

NPN silicon transistor

0.5 0.1

(1) (2)

(3)

2.54

1.05

0.45 0.1

(1) Emitter

(2) Collector

(3) Base

ROHM : ATV

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

A (DC)

A (Pulse)

Collector current

∗1

4.5

∗2

Collector power dissipation

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

°C

∗1 Single pulse, P =100ms

∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm²or larger.

Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol Min.

Typ.

−

Max.

Unit

Conditions

BV^CBO

BVCEO

BVEBO

−

=50μA

=1mA

−

=50μA

CB=40V

EB=4V

CBO

EBO

CE (sat)

−

μA

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current transfer ratio

−

0.5

−

B=2A/0.2A

∗

−

120

−

390

CE=3V, I

=0.5A

=−500mA, f=30MHz

=0A, f=1MHz

Transition frequency

−

MHz

CE=5V, I

Output capacitance

Cob

−

CB=10V, I

∗ Measured using pulse current.

www.rohm.com

2010.04 - Rev.B

1/3

12 3 4

中文翻译

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