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2SD1864TV3/R PDF预览

2SD1864TV3/R

更新时间: 2024-11-07 08:22:39
品牌 Logo 应用领域
罗姆 - ROHM 开关晶体管
页数 文件大小 规格书
2页 101K
描述
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

2SD1864TV3/R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.83最大集电极电流 (IC):3 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):90 MHz
VCEsat-Max:1 V

2SD1864TV3/R 数据手册

 浏览型号2SD1864TV3/R的Datasheet PDF文件第2页 

与2SD1864TV3/R相关器件

型号 品牌 获取价格 描述 数据表
2SD1864TV3P ROHM

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3000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1864TV3R ROHM

获取价格

3000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1864TV4 ROHM

获取价格

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1864TV4/N ROHM

获取价格

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1864TV4/NP ROHM

获取价格

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1864TV4/NQ ROHM

获取价格

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1864TV4/P ROHM

获取价格

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1864TV4/PQ ROHM

获取价格

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1864TV4/PR ROHM

获取价格

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
2SD1864TV4/Q ROHM

获取价格

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon