是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN SILVER COPPER | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1864TV4R | ROHM |
获取价格 |
3000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD1864TV6 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1864TV6/NP | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1864TV6/PR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1864TV6/Q | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1864TV6/QR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1864TV6P | ROHM |
获取价格 |
3000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD1864TV6Q | ROHM |
获取价格 |
3000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD1864TV6R | ROHM |
获取价格 |
3000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD1865 | ROHM |
获取价格 |
MEDIUM POWER TRANSISTOR |