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2SD1766T100/QR PDF预览

2SD1766T100/QR

更新时间: 2024-01-30 06:36:35
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 171K
描述
2A, 32V, NPN, Si, POWER TRANSISTOR

2SD1766T100/QR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-62
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliant风险等级:5.58
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PSSO-F3
JESD-609代码:e2元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN功耗环境最大值:2 W
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN COPPER端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.8 V
Base Number Matches:1

2SD1766T100/QR 数据手册

 浏览型号2SD1766T100/QR的Datasheet PDF文件第1页浏览型号2SD1766T100/QR的Datasheet PDF文件第3页浏览型号2SD1766T100/QR的Datasheet PDF文件第4页 
2SD1766 / 2SD1758 / 2SD1862  
Data Sheet  
Electrical characteristics (Ta=25C)  
Parameter  
Symbol Min.  
Typ. Max.  
Unit  
V
Conditions  
Collector-base breakdown voltage  
BVCBO  
40  
32  
5
I
I
I
C
=50μA  
=1mA  
Collector-emitter breakdown voltage BVCEO  
V
C
Emitter-base breakdown voltage  
Collector cutoff current  
BVEBO  
V
E
=50μA  
CB=20V  
EB=4V  
I
CBO  
EBO  
FE  
CE(sat)  
1
μA  
μA  
V
V
V
Emitter cutoff current  
I
1
DC current transfer ratio  
Collector-emitter saturation voltage  
Transition frequency  
h
120  
390  
0.8  
CE=3V, I =0.5A  
C
V
0.5  
100  
30  
I
C
/I  
CE=5V, I  
CB=10V, I  
B
=2A / 0.2A  
=−50mA, f=100MHz  
=0A, f=1MHz  
V
f
T
MHz  
pF  
V
V
E
Output capacitance  
Cob  
E
Measured using pulse current.  
Packaging specifications and hFE  
Package  
Taping  
TL  
Code  
Basic ordering  
unit (pieces)  
T100  
1000  
TV2  
2500  
2500  
Type  
hFE  
2SD1766  
2SD1758  
2SD1862  
QR  
QR  
QR  
hFE values are classified as follows :  
Item  
Q
R
hFE  
120 to 270 180 to 390  
Electrical characteristic curves  
0.5  
0.4  
0.3  
0.2  
Ta=25°C  
Ta=25°C  
2000  
Ta=25°C  
3.0mA  
2.7mA  
2.4mA  
2.1mA  
1.8mA  
1.5mA  
1.2mA  
V
CE=3V  
500  
1000  
500  
200  
100  
50  
200  
100  
50  
V
CE=3V  
1V  
20  
10  
5
0.9mA  
0.6mA  
0.3mA  
0.1  
0
2
1
0
IB=0A  
20  
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
BASE TO EMITTER VOLTAGE : VBE (V)  
0
0.4  
0.8  
1.2  
1.6  
2.0  
5
10 20  
50 100 200 500 1A 2A  
(mA)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
COLLECTOR CURRENT : I  
C
Fig.1 Grounded emitter propagation  
characteristics  
Fig.2 Grounded emitter output  
characteristics  
Fig.3 DC current gain vs. collector  
current  
1000  
2
1
Ta=25°C  
CE=5V  
Ta=25°C  
Ta=25°C  
V
500  
500  
IC/IB=10  
200  
100  
200  
100  
50  
0.5  
IC/IB=50  
0.2  
0.1  
50  
20  
10  
10 20 50 100 200 500 1A 2A  
20  
1 2  
20  
5
10 20  
50 100 200 500 1A 2A  
(mA)  
5 10 20 50100200 500 1A  
EMITTER CURRENT : I (mA)  
5
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : I (mA)  
C
E
Fig.4 Collector-emitter saturation  
voltage vs. collector current  
Fig.5 Collector-emitter saturation  
voltage vs. collector current  
Fig.6 Transition frequency vs. emitter  
current  
www.rohm.com  
2009.12 - Rev.B  
2/3  
c
2009 ROHM Co., Ltd. All rights reserved.  

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