Datasheet > 2SD1631(TPF2,Q)

2SD1631(TPF2,Q)

更新时间： 2024-11-05 07:08:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	146K
描述
TRANSISTOR,BJT,DARLINGTON,NPN,30V V(BR)CEO,1.5A I(C),SC-71

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2SD1631(TPF2,Q) 数据手册

2SD1631

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor)

2SD1631

Micro Motor Drive, Hammer Drive Applications

Unit: mm

Switching Applications

Power Amplifier Applications

•

High DC current gain: h = 4000 (min) (V

= 2 V, I = 150 mA)

CE C

Low saturation voltage: V

= 1.5 V (max) (I = 1 A, I = 1 mA)

CE (sat)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Continuous collector current

Continuous base current

Collector power dissipation

Junction temperature

1.5

°C

JEDEC

JEITA

―

1000

150

TOSHIBA

2-7D101A

Storage temperature range

stg

−55 to 150

Weight: 0.2 g (typ.)

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Equivalent Circuit

COLLECTOR

BASE

EMITTER

2010-03-10

12 3 4 5

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