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2SD1640R PDF预览

2SD1640R

更新时间: 2024-09-23 23:20:27
品牌 Logo 应用领域
其他 - ETC 晶体晶体管放大器局域网
页数 文件大小 规格书
3页 66K
描述
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-126

2SD1640R 数据手册

 浏览型号2SD1640R的Datasheet PDF文件第2页浏览型号2SD1640R的Datasheet PDF文件第3页 
Power Transistors  
2SD1640  
Silicon NPN epitaxial planar type darlington  
Unit: mm  
+0.5  
–0.1  
For low-frequency output amplification  
8.0  
3.2 0.2  
φ 3.16 0.1  
I Features  
Darlington connection  
High forward current transfer ratio hFE  
Large peak collector current ICP  
High collector to emitter voltage VCEO  
I Absolute Maximum Ratings TC = 25°C  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
0.75 0.1  
4.6 0.2  
0.5 0.1  
2.3 0.2  
0.5 0.1  
1.76 0.1  
120  
100  
V
1: Emitter  
2: Collector  
3: Base  
5
V
1
2
3
3
A
TO-126B Package  
IC  
2
1.2  
A
Internal Connection  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
W
°C  
°C  
Tj  
150  
C
Tstg  
55 to +150  
B
E
I Electrical Characteristics TC = 25°C  
Parameter  
Symbol  
ICBO  
Conditions  
Min  
Typ  
Max  
0.1  
1
Unit  
µA  
µA  
V
Collector cutoff current  
VCB = 25 V, IE = 0  
Emitter cutoff current  
IEBO  
VEB = 4 V, IC = 0  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
hFE  
IC = 100 µA, IE = 0  
IC = 1 mA, IB = 0  
120  
100  
5
V
IE = 100 µA, IC = 0  
VCE = 10 V, IC = 1 A  
IC = 1 A, IB = 1 mA  
IC = 1 A, IB = 1 mA  
VCE = 10 V, IE = 50 mA, f = 200 MHz  
V
Forward current transfer ratio *  
Collector to emitter saturation voltage  
Base to emitter saturation voltage  
Transition frequency  
4 000  
40 000  
1.5  
VCE(sat)  
VBE(sat)  
fT  
V
2
150  
MHz  
Note) : Rank classification  
*
Rank  
Q
R
S
hFE  
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000  
1

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