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2SD1423 PDF预览

2SD1423

更新时间: 2024-11-11 00:00:47
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管放大器
页数 文件大小 规格书
2页 40K
描述
Silicon NPN epitaxial planer type

2SD1423 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.83Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SD1423 数据手册

 浏览型号2SD1423的Datasheet PDF文件第2页 
Transistor  
2SD1423, 2SD1423A  
Silicon NPN epitaxial planer type  
For low-frequency amplification  
Unit: mm  
Complementary to 2SB1030 and 2SB1030A  
4.0±0.2  
Features  
Optimum for high-density mounting.  
Allowing supply with the radial taping.  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
Ratings  
Unit  
marking  
Collector to  
2SD1423  
2SD1423A  
2SD1423  
30  
VCBO  
V
1
2
3
base voltage  
Collector to  
60  
25  
VCEO  
V
1.27 1.27  
emitter voltage 2SD1423A  
Emitter to base voltage  
Peak collector current  
Collector current  
50  
2.54±0.15  
VEBO  
ICP  
IC  
7
V
A
1
0.5  
1:Emitter  
2:Collector  
3:Base  
A
EIAJ:SC–72  
New S Type Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
300  
mW  
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
0.1  
1
Unit  
µA  
VCB = 20V, IE = 0  
Collector cutoff current  
ICEO  
VCE = 20V, IB = 0  
µA  
Collector to base  
voltage  
2SD1423  
2SD1423A  
30  
60  
25  
50  
7
VCBO  
IC = 10µA, IE = 0  
V
Collector to emitter 2SD1423  
VCEO  
VEBO  
IC = 2mA, IB = 0  
V
V
voltage  
2SD1423A  
Emitter to base voltage  
IE = 10µA, IC = 0  
*1  
hFE1  
hFE2  
VCE = 10V, IC = 150mA*2  
VCE = 10V, IC = 500mA*2  
IC = 300mA, IB = 30mA*2  
85  
40  
340  
0.6  
15  
Forward current transfer ratio  
Collector to emitter saturation voltage VCE(sat)  
V
MHz  
pF  
Transition frequency  
fT  
VCB = 10V, IE = –50mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
200  
6
Collector output capacitance  
Cob  
*2 Pulse measurement  
*1  
h
Rank classification  
FE1  
Rank  
hFE1  
Q
R
S
85 ~ 170  
120 ~ 240  
170 ~ 340  
1

2SD1423 替代型号

型号 品牌 替代类型 描述 数据表
2SD1020 NEC

功能相似

NPN SILICON TRANSISTOR

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